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Impact of Oxygen Vacancy on Performance of Amorphous InGaZnO Based Schottky Barrier Diode -发光学报2025年03期

Impact of Oxygen Vacancy on Performance of Amorphous InGaZnO Based Schottky Barrier Diode

作者:JIA Bin TONG Xiaowen HAN Zikang QIN Ming WANG Lifeng2* HUANG Xiaodong 字体:      

(1.21oo96, 2.Engineering,SoutheastUniversity,Nanjing21Oo96,) (204 Corresponding Authors,E-mail:wanglifeng@seu.edu.cn; xdhuang@seu.edu.cn

Abstract:Rectifying circuit,as a crucial component (试读)...

发光学报

2025年第03期